Coverart for item
The Resource Electronic characterization of defects in narrow gap semiconductors : comparison of electronic energy levels and formation energies in Mercury Cadmium Telluride Mercury Zinc Telluride and Mercury Zinc Selenide, semi-annual report, September 19, 1994 to March 19, 1995, Wei-Gang Li, (microform)

Electronic characterization of defects in narrow gap semiconductors : comparison of electronic energy levels and formation energies in Mercury Cadmium Telluride Mercury Zinc Telluride and Mercury Zinc Selenide, semi-annual report, September 19, 1994 to March 19, 1995, Wei-Gang Li, (microform)

Label
Electronic characterization of defects in narrow gap semiconductors : comparison of electronic energy levels and formation energies in Mercury Cadmium Telluride Mercury Zinc Telluride and Mercury Zinc Selenide, semi-annual report, September 19, 1994 to March 19, 1995
Title
Electronic characterization of defects in narrow gap semiconductors
Title remainder
comparison of electronic energy levels and formation energies in Mercury Cadmium Telluride Mercury Zinc Telluride and Mercury Zinc Selenide, semi-annual report, September 19, 1994 to March 19, 1995
Statement of responsibility
Wei-Gang Li
Creator
Contributor
Subject
Language
eng
Member of
Cataloging source
GPO
http://library.link/vocab/creatorDate
1934-
http://library.link/vocab/creatorName
Patterson, James D.
Government publication
federal national government publication
Index
no index present
Literary form
non fiction
http://library.link/vocab/relatedWorkOrContributorName
  • Li, Wei-Gang
  • United States
Series statement
NASA contractor report
Series volume
NASA CR-197835
http://library.link/vocab/subjectName
  • Crystal defects
  • Electron energy
  • Energy levels
  • Energy of formation
  • Mercury cadmium tellurides
  • Mercury tellurides
  • Semiconductors (materials)
  • Zinc selenides
  • Zinc tellurides
Label
Electronic characterization of defects in narrow gap semiconductors : comparison of electronic energy levels and formation energies in Mercury Cadmium Telluride Mercury Zinc Telluride and Mercury Zinc Selenide, semi-annual report, September 19, 1994 to March 19, 1995, Wei-Gang Li, (microform)
Instantiates
Publication
Note
  • Distributed to depository libraries in microfiche
  • Shipping list no.: 95-0749-M
Carrier category
microform
Carrier MARC source
local
Content category
text
Content type code
txt
Content type MARC source
rdacontent
Control code
ocm33425545
Extent
1 volume .
Form of item
microfiche
Media category
microform
Media MARC source
rdamedia
Media type code
h
Reproduction note
Microfiche.
Stock number
N 95-26780
System control number
  • (GPO)96055173
  • (OCoLC)33425545
  • (GPO)96055173
  • (Sirsi) a549777
Label
Electronic characterization of defects in narrow gap semiconductors : comparison of electronic energy levels and formation energies in Mercury Cadmium Telluride Mercury Zinc Telluride and Mercury Zinc Selenide, semi-annual report, September 19, 1994 to March 19, 1995, Wei-Gang Li, (microform)
Publication
Note
  • Distributed to depository libraries in microfiche
  • Shipping list no.: 95-0749-M
Carrier category
microform
Carrier MARC source
local
Content category
text
Content type code
txt
Content type MARC source
rdacontent
Control code
ocm33425545
Extent
1 volume .
Form of item
microfiche
Media category
microform
Media MARC source
rdamedia
Media type code
h
Reproduction note
Microfiche.
Stock number
N 95-26780
System control number
  • (GPO)96055173
  • (OCoLC)33425545
  • (GPO)96055173
  • (Sirsi) a549777

Library Locations

    • Central Library, Jesse H. Jones BuildingBorrow it
      500 McKinney St., Houston, TX, 77002, US
      29.759431 -95.369953
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