Coverart for item
The Resource Electron beam induced damage in PECVD Si3N4 and SiO2 films on InP, Dragan M. Pantic ... [and others] ; presented at the Dielectric Films on Compound Semiconductors Symposium sponsored by the Electrochemical Society, Honolulu, Hawaii, October 18-23, 1987, (microform)

Electron beam induced damage in PECVD Si3N4 and SiO2 films on InP, Dragan M. Pantic ... [and others] ; presented at the Dielectric Films on Compound Semiconductors Symposium sponsored by the Electrochemical Society, Honolulu, Hawaii, October 18-23, 1987, (microform)

Label
Electron beam induced damage in PECVD Si3N4 and SiO2 films on InP
Title
Electron beam induced damage in PECVD Si3N4 and SiO2 films on InP
Statement of responsibility
Dragan M. Pantic ... [and others] ; presented at the Dielectric Films on Compound Semiconductors Symposium sponsored by the Electrochemical Society, Honolulu, Hawaii, October 18-23, 1987
Contributor
Subject
Language
eng
Member of
Additional physical form
Also available via Internet from the NASA Technical Report Server web site. Address as of 5/9/06: http://ntrs.nasa.gov/archive/nasa/casi.ntrs.nasa.gov/19900011077%5F1990011077.pdf ; current access is available via PURL.
Cataloging source
OKX
Government publication
federal national government publication
Illustrations
illustrations
Index
no index present
Literary form
non fiction
Nature of contents
bibliography
http://library.link/vocab/relatedWorkOrContributorName
  • Pantic, Dragan M
  • Electrochemical Society
  • United States
  • Symposium on Dielectric Films on Compound Semiconductors
Series statement
NASA technical memorandum
Series volume
102544
http://library.link/vocab/subjectName
  • Dielectric films
  • Capacitance-voltage characteristics
  • Electron beams
  • Indium phosphides
  • Irradiation
  • Phosphorus
  • Plasmas (physics)
  • Radiation damage
  • Vapor deposition
Label
Electron beam induced damage in PECVD Si3N4 and SiO2 films on InP, Dragan M. Pantic ... [and others] ; presented at the Dielectric Films on Compound Semiconductors Symposium sponsored by the Electrochemical Society, Honolulu, Hawaii, October 18-23, 1987, (microform)
Link
http://purl.access.gpo.gov/GPO/LPS69699
Instantiates
Publication
Note
Cover title
Base of film
safety base undetermined
Bibliography note
Includes bibliographical references (page 13)
Carrier category
microfiche
Carrier category code
he
Carrier MARC source
rdacarrier
Color
black and white
Content category
text
Content type code
txt
Content type MARC source
rdacontent
Control code
ocm25060756
Dimensions
28 cm.
Dimensions
4x6 in. or 11x15 cm.
Emulsion on film
diazo
Extent
15 pages
Form of item
microfiche
Generation
service copy
Media category
microform
Media MARC source
rdamedia
Media type code
h
Other physical details
illustrations
Positive negative aspect
negative
http://bibfra.me/vocab/marc/reductionRatio
02
ReductionRatioRange
normal reduction
Reproduction note
Microfiche.
Specific material designation
microfiche
Stock number
N 90-20393
System control number
  • (GPO)99189300
  • (OCoLC)25060756
  • (GPO)99189300
  • (Sirsi) a865796
Label
Electron beam induced damage in PECVD Si3N4 and SiO2 films on InP, Dragan M. Pantic ... [and others] ; presented at the Dielectric Films on Compound Semiconductors Symposium sponsored by the Electrochemical Society, Honolulu, Hawaii, October 18-23, 1987, (microform)
Link
http://purl.access.gpo.gov/GPO/LPS69699
Publication
Note
Cover title
Base of film
safety base undetermined
Bibliography note
Includes bibliographical references (page 13)
Carrier category
microfiche
Carrier category code
he
Carrier MARC source
rdacarrier
Color
black and white
Content category
text
Content type code
txt
Content type MARC source
rdacontent
Control code
ocm25060756
Dimensions
28 cm.
Dimensions
4x6 in. or 11x15 cm.
Emulsion on film
diazo
Extent
15 pages
Form of item
microfiche
Generation
service copy
Media category
microform
Media MARC source
rdamedia
Media type code
h
Other physical details
illustrations
Positive negative aspect
negative
http://bibfra.me/vocab/marc/reductionRatio
02
ReductionRatioRange
normal reduction
Reproduction note
Microfiche.
Specific material designation
microfiche
Stock number
N 90-20393
System control number
  • (GPO)99189300
  • (OCoLC)25060756
  • (GPO)99189300
  • (Sirsi) a865796

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